SD107WS [BL Galaxy Electrical]
Silicon Epitaxial Planar Diode; 硅外延平面二极管
| 型号： | SD107WS |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Diode |
| 文件： | 总2页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Diode
SD107WS
FEATURES
Pb
Lead-free
z
z
z
z
Low forward voltage drop.
Guard ring die construction for transient protection.
Ideal for low logic level applications.
Low capacitance.
APPLICATIONS
z
Schottky barrier switching
SOD-323
ORDERING INFORMATION
Type No.
Marking
SG
Package Code
SOD-323
SD107WS
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak Repetitive reverse voltage
VRRM
VR(RMS)
IF
30
V
RMS Reverse Voltage
21
V
Forward continuous Current
Non-Repetitive Peak Forward Surge Current @tp≤10ms
Power dissipation
100
750
250
500
150
mA
mA
mW
℃/W
℃
IFSM
Pd
Thermal resistance junction to ambient air
Junction temperature
RθjA
Tj
Storage temperature
TSTG
-65~+150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Reverse breakdown voltage
VR
30
V
IR=100μA
IF=2mA
300
360
470
580
IF=15mA
Forward voltage
VF
mV
550
800
1.0
7
IF=50mA
IF=100mA
VR=25V
Reverse current
IR
μA
Capacitance between terminals
CT
pF
VR=10V,f=1MHz
Document number: BL/SSSKB027
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Diode
SD107WS
PACKAGE OUTLINE
Plastic surface mounted package
SOD-323
SOD-323
K
B
Dim
A
B
Min
1.275
1.675
Max
1.325
1.725
C
A
C
0.9 Typical
D
D
E
0.25
0.27
0.02
0.35
0.37
0.1
H
J
0.1 Typical
J
H
E
K
2.6
2.7
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
SD106WS
SOD-323
3000/Tape&Reel
Document number: BL/SSSKB027
Rev.A
www.galaxycn.com
2
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